Paper Title:
On the Characterization of Boron in BGaAs Nano-Films Using IBA Techniques
  Abstract

In this work, the capability of the proton Induced γ-ray Emission (PIGE) technique to monitor a rapid, nondestructive and quantification of Boron in ultra-thin films of BxGa1-xAs deposited on GaAs substrate using MOCVD is discussed. In order to improve the sensitivity for B detection, a systematic study was undertaken using proton induced beam at three different energies (from 1.7, 2.4 and 3 MeV) with different tilting angles (0, 60° and 80°). Best conditions were found to be at 1.7 MeV and at 80° for proton energy and tilting angle within ten minutes of acquisition time.

  Info
Periodical
Chapter
Chapter II: Characterizations Techniques and Properties
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
314-317
DOI
10.4028/www.scientific.net/AMR.324.314
Citation
S. Abboudy, M. Soueidan, Q. Al Asaad, L. Auvray, G. Ferro, M. Roumie, B. Nsouli, "On the Characterization of Boron in BGaAs Nano-Films Using IBA Techniques", Advanced Materials Research, Vol. 324, pp. 314-317, 2011
Online since
August 2011
Keywords
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Price
$32.00
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