Paper Title:
DC Characterization of Different Advanced MOSFET Architectures
  Abstract

A review of recent results concerning the DC characterization of FD- and Double Gate SOI MOSFET’s and FinFETs in modern CMOS technologies is given. By proper extraction techniques, distinction between the different interaction mechanisms is done. Parameter extraction conducted at room and low temperature clearly indicates that the mobility is directly impacted by shrinking the gate length in sub 100nm architectures.

  Info
Periodical
Chapter
Chapter III: Applications
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
407-410
DOI
10.4028/www.scientific.net/AMR.324.407
Citation
J. Jomaah, M. Fadlallah, G. Ghibaudo, "DC Characterization of Different Advanced MOSFET Architectures", Advanced Materials Research, Vol. 324, pp. 407-410, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto
Abstract:4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has a top channel on the (0001) face and side-wall channels on the...
753
Authors: Toshiyuki Nakashima, Tatsuya Idemoto, Isao Tsunoda, Kenichiro Takakura, Masashi Yoneoka, Hidenori Ohyama, Kenji Yoshino, Eddy Simoen, Cor Claeys
Chapter 5: Group IV Materials: Defect, Impurity, and Nanostructure
Abstract:The effect of 2-MeV electron irradiation of Si1-xGex S/D p-MOSFETs with different gate length and Ge concentration is...
235
Authors: Seung Min Lee, Hyun Jun Jang, Jong Tae Park
Chapter 5: Electronics and Materials for Electronics
Abstract:A comparative study on off-state breakdown characteristics in nanowire JL and IM multiple gate MOSFETs has been performed for different gate...
295
Authors: Tamara Rudenko, Sylvain Barraud, Yordan M. Georgiev, Vladimir Lysenko, Alexey Nazarov
Chapter 1: Low-Power Electronics and Spintronics
Abstract:This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold...
17