Paper Title:
Side Gate Graphene and AlGaN/GaN Unipolar Nanoelectronic Devices
  Abstract

Three-terminal junction devices were realized in graphene grown heteroepitaxially on semiinsulating silicon carbide as well as in AlGaN/GaN heterostructures grown by MOCVD on sapphire containing a two dimensional electron gas. These nanoelectronic devices were fabricated using electron beam lithography. In both types of heterostructures room temperature electrical measurements revealed a pronounced nonlinear electrical behavior of the fabricated nanoelectronic devices. The obtained voltage rectification at room temperature demonstrates the feasibility of func-tional three-terminal junctions in heterostructures consisting of types of high carrier mobility struc-tures than classical III-V semiconductor heterostructures.

  Info
Periodical
Chapter
Chapter III: Applications
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
427-430
DOI
10.4028/www.scientific.net/AMR.324.427
Citation
R. Göckeritz, K. Tonisch, W. Jatal, L. Hiller, F. Schwierz, J. Pezoldt, "Side Gate Graphene and AlGaN/GaN Unipolar Nanoelectronic Devices", Advanced Materials Research, Vol. 324, pp. 427-430, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Katja Tonisch, Wael Jatal, Ralf Granzner, Mario Kittler, Uwe Baumann, Frank Schwierz, Jörg Pezoldt
Abstract:We present the realization of high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures grown on silicon substrates...
1219
Authors: Fabrizio Roccaforte, Giuseppe Greco, Ming Hung Weng, Filippo Giannazzo, Vito Raineri
Abstract:In this work the electrical and structural properties of AlGaN/GaN heterostructures grown onto 8°-off-axis 4H-SiC epilayers were...
808
Authors: Lars Hiller, Katja Tonisch, Jörg Pezoldt
Chapter 10: Device and Application
Abstract:Heteroepitaxial AlGaN/GaN on SiC/Si pseudosubstrate was used to fabricate three-terminal junction devices. Narrow bar and wide bar type...
1119
Authors: Wael Jatal, Uwe Baumann, Heiko O. Jacobs, Frank Schwierz, Jörg Pezoldt
5.2 Nitrides and other Materials
Abstract:A nanochannel array structure was applied to realize enhancement-mode high electron mobility transistors based on...
1174