Paper Title:
Low Cost SU8 Based Above IC Process for High-Q RF Power Inductors Integration
  Abstract

This paper presents a new process for integration of high-Q RF power inductors above low resistivity silicon substrates. The process uses the SU8 resin as a dielectric layer. The aim of using the SU8 is to form thick dielectric layer that can enhance the performance of the inductors. The flexibility of the process enables the possibility to realize complex shaped planar inductors with various dielectric and metal thicknesses to meet the requirements of the application. Q values of 55 at 5 GHz has been demonstrated for an inductance value of 0.8 nH using a 60 µm thick SU8 layer and 30 µm thick copper ribbons.

  Info
Periodical
Chapter
Chapter III: Applications
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
431-433
DOI
10.4028/www.scientific.net/AMR.324.431
Citation
A. Ghannam, D. Bourrier, C. Viallon, T. Parra, "Low Cost SU8 Based Above IC Process for High-Q RF Power Inductors Integration", Advanced Materials Research, Vol. 324, pp. 431-433, 2011
Online since
August 2011
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Price
$32.00
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