Paper Title:
Low Frequency Noise Analysis in Advanced CMOS Devices
  Abstract

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

  Info
Periodical
Chapter
Chapter III: Applications
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
441-444
DOI
10.4028/www.scientific.net/AMR.324.441
Citation
J. Jomaah, M. Fadlallah, G. Ghibaudo, "Low Frequency Noise Analysis in Advanced CMOS Devices", Advanced Materials Research, Vol. 324, pp. 441-444, 2011
Online since
August 2011
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Price
$32.00
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