Paper Title:
Compliance at the GaSb/GaP Interface by Misfit Dislocations Array
  Abstract

We study the initial growth of 10 monolayers (MLs) of GaSb on a (001) GaP substrate. Transmission electron microscopy and reflection high energy electron diffraction analysis show that an Sb-rich GaP surface promotes the formation of a 90° misfit dislocation array at the epi-substrate interface. Using atomic force microscopy, we investigate the influence of the growth temperature and the growth rate on the formation and the shape of GaSb islands.

  Info
Periodical
Chapter
Chapter I: Materials and Elaboration Techniques
Edited by
Maher Soueidan, Mohamad Roumié and Pierre Masri
Pages
85-88
DOI
10.4028/www.scientific.net/AMR.324.85
Citation
S. El Kazzi, L. Desplanque, C. Coinon, Y. Wang, P. Ruterana, X. Wallart, "Compliance at the GaSb/GaP Interface by Misfit Dislocations Array", Advanced Materials Research, Vol. 324, pp. 85-88, 2011
Online since
August 2011
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$32.00
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