Paper Title:
Compliance at the GaSb/GaP Interface by Misfit Dislocations Array
| Periodical | Advanced Materials Research (Volume 324) |
|---|---|
| Main Theme | Advances in Innovative Materials and Applications |
| Edited by | Maher Soueidan, Mohamad Roumié and Pierre Masri |
| Pages | 85-88 |
| DOI | 10.4028/www.scientific.net/AMR.324.85 |
| Citation | Salim El Kazzi et al., 2011, Advanced Materials Research, 324, 85 |
| Online since | August, 2011 |
| Authors | Salim El Kazzi, Ludovic Desplanque, Christophe Coinon, Yi Wang, Pierrre Ruterana, Xavier Wallart |
| Keywords | Antimonides, Gallium Phosphide, Misfit Dislocation, Molecular Beam Epitaxy |
| Price | US$ 28,- |
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Abstract
We study the initial growth of 10 monolayers (MLs) of GaSb on a (001) GaP substrate. Transmission electron microscopy and reflection high energy electron diffraction analysis show that an Sb-rich GaP surface promotes the formation of a 90° misfit dislocation array at the epi-substrate interface. Using atomic force microscopy, we investigate the influence of the growth temperature and the growth rate on the formation and the shape of GaSb islands.
