Paper Title
Page
Authors: Farouk Fardoun, Srinivasan Iyengar, Solveig Melin
Chapter II: Characterizations Techniques and Properties
Abstract:Brass is a popular engineering material used in a variety of applications requiring good strength, ductility, corrosion resistance and...
185
Authors: Ali Hallal, Farouk Fardoun, Rafic Younes, Fadi Hage Chehade
Chapter II: Characterizations Techniques and Properties
Abstract:This work represents a comparative study of available analytical micromechanical models used to evaluate the elastic properties of...
189
Authors: Mutasem Shehahdeh
Chapter II: Characterizations Techniques and Properties
Abstract:Multiscale dislocation dynamics plasticity (MDDP) simulations are carried out to address the following issues in modeling shock-induced...
193
Authors: Nadi Braidy, Carmen Andrei, Jasmin Blanchard, Nicolas Abatzoglou
Chapter II: Characterizations Techniques and Properties
Abstract:χThe nanostructure of Fischer-Tropsch (FT) Fe carbides are investigated using aberration-corrected high-resolution transmission electron...
197
Authors: Husam Abu-Safe
Chapter II: Characterizations Techniques and Properties
Abstract:Horizontal silicon nanowires were grown using thermal annealing of thin layers of aluminum on silicon substrates. The template to grow these...
201
Authors: Ziyad S. A. Al Sarraj, Mukhlis M. Ismail, Sabah M. Ali, Wan Q. Cao
Chapter II: Characterizations Techniques and Properties
Abstract:BaTiO3 powders were prepared hydrothermally using TiCl4, Ba(OH)2.8H2O and NH4OH as...
205
Authors: Mohamed Larbi Medjroubi, Ouarda Brihi, Noudjoud Hamdouni, Ali Boudjada, Jean Meinnel
Chapter II: Characterizations Techniques and Properties
Abstract:The crystal structure of Dibromonitrotoluen (DBNT) obtained at the ambient temperature 293k from the X-ray diffraction crystallizes in the...
209
Authors: Richard Nader, Jörg Pezoldt
Chapter II: Characterizations Techniques and Properties
Abstract:To improve the quality of AlN layer deposit on SiC/Si, different Ge amounts (0.25, 0.5, 1, 2ML) were deposited before the carbonization...
213
Authors: Jörg Pezoldt, Andrei Alexandrovich Kalnin
Chapter II: Characterizations Techniques and Properties
Abstract:The polytype transitions are caused by disorder generation in the initial structure due to energy dissipation. The disorder is strongly...
217
Authors: Aurore Constant, Philippe Godignon
Chapter II: Characterizations Techniques and Properties
Abstract:Gate oxides for SiC lateral MOSFETs have been formed in N2O by rapid thermal processing (RTP) as an alternative to the conventional furnace...
221
Showing 41 to 50 of 120 Paper Titles