Paper Title:
Research on the Polishing Performance of CMP Slurry for the Sapphire Crystal
  Abstract

Aiming at the problems such as metal ionic contamination, poor dispersion property and low material removal rate (MRR) in the chemical mechanical polishing (CMP) process for sapphire crystal, a proper CMP slurry based on the organic basis was studied in this paper. Through the single-factor experiment, the effect of different abrasives, pH regulators, dispersants and active agents on the surface roughness and material removal rate (MRR) were studied and a fine CMP slurry was developed. The polishing performance of developed CMP slurry was also researched by comparing the MRR and the surface roughness of sapphire crystal with that polished using the KA-901 CMP slurry. The results show that the MRR and the surface roughness corresponding to the developed slurry were all better than KA-901 slurry, and the developed CMP slurry has a good application prospect.

  Info
Periodical
Chapter
Chapter 3: Polishing and Lapping
Edited by
Taghi Tawakoli
Pages
457-463
DOI
10.4028/www.scientific.net/AMR.325.457
Citation
S. Gao, R. K. Kang, Z. J. Jin , Z. G. Dong, "Research on the Polishing Performance of CMP Slurry for the Sapphire Crystal", Advanced Materials Research, Vol. 325, pp. 457-463, 2011
Online since
August 2011
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Price
$32.00
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