Paper Title:
Defect-Related Photoluminescence from SiO2 Thin Films by Si-Ge Ions Doped
  Abstract

Si and Ge ions are implanted into SiO2 thin films, subsequently the annealing treatment are carried out. The samples exhibit photoluminescence (PL) peaks at 400, 470, 550 and 780 nm. With the annealing temperature increasing, the intensity of 400-470 nm PL band increases remarkably. After oxidation annealing treatment, the intensity of 400-470 nm PL band decreases, and that of 550 nm and 780 nm PL peaks rises. Combing with the results of X-ray photoelectron spectroscopy(XPS), X-ray diffraction (XRD) and PL measurement, we propose that the PL peaks at 400 nm, 470 nm, 550 nm and 780 nm originate from ≡Ge−Si≡ center, ≡Si−Si≡ center, SPR center and GeO center, respectively.

  Info
Periodical
Advanced Materials Research (Volumes 328-330)
Chapter
Chapter 2: Material Science and Technology
Edited by
Liangchi Zhang, Chunliang Zhang and Zichen Chen
Pages
1153-1156
DOI
10.4028/www.scientific.net/AMR.328-330.1153
Citation
K. Zhong, Y. D. Xia, J. H. Miao, J. Fu, "Defect-Related Photoluminescence from SiO2 Thin Films by Si-Ge Ions Doped", Advanced Materials Research, Vols. 328-330, pp. 1153-1156, 2011
Online since
September 2011
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Price
$32.00
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