TeO2-SiO2 composite films were prepared by electrochemically induced sol-gel method, using ITO glass as a base. The structure of the films was characterized by XRD. The transmission spectrum and reflectance optical spectrum of the film were obtained by a spectrophotometer. In the visible and near infrared range, transmittance of films is greater than 80%;linear refractive index is greater than 2.2. The films electrode was produced by high vacuum evaporation method. The electrical properties of the films were measured by the method of weak current measurement. It was observed that the nonlinear relationship of films’ resistance was characterized by the measured I-V curves, and the tested current was weak. Hence TeO2-SiO2 composite films have good optical and electrical properties, and it would be the semiconductor film with the development and application prospects.