Paper Title:
Two High-Speed and Large-Drive-Current BiCMOS Analog Switches
  Abstract

In order to obtain high-speed and large-drive-current during operation, this paper proposed two structure-advanced BiCMOS analog switches. On the key parts of the circuit, a few Bipolar Junction Transistors (BJTs) were used while for the main parts, the Complementary Metal Oxide Semiconductor (CMOS) devices were configured. The component parameters were optimized and the measures for accelerating the operation and raising the drive-current were taken. The performance of the proposed two analog switches was tested through simulation and experiments of hardware circuits. The results indicated that the Delay-Power Product (DP) of the BiCMOS operating in the voltage range of 2.5V~3.5V is reduced by an average of 26.1pJ and the driving current is more than 1.38mA as compared with those of the conventional CMOS analog switches. These advantages show the great potential of the proposed two BiCMOS analog switches in the digital communication systems which require low-voltage, high-speed and large-drive-current.

  Info
Periodical
Advanced Materials Research (Volumes 328-330)
Chapter
Chapter 2: Material Science and Technology
Edited by
Liangchi Zhang, Chunliang Zhang and Zichen Chen
Pages
1245-1248
DOI
10.4028/www.scientific.net/AMR.328-330.1245
Citation
L. Cheng, J. J. Xi, N. Li, N. Yang, "Two High-Speed and Large-Drive-Current BiCMOS Analog Switches", Advanced Materials Research, Vols. 328-330, pp. 1245-1248, 2011
Online since
September 2011
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Price
$32.00
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