Ti film on AISI 201 was prepared by plasma. The film was characterized and analyzed by using XRD. it was found that of Ti film has a different microstructure in different condition. With negative bias increased from 15V to 260V, the diffraction peaks of Ti films changed from planes (111) to planes (200). With power increased from 8W to 145W, the diffraction peaks of Ti films decrease at planes (002), the diffraction peaks of Ti films decrease at planes (102) and (103). The result suggests that negative bias and power contributed to form an different phase throughout the films. The vacuum, distance and time have no effect to crystal of Ti film.