Fracture Mechanics Analysis on Smart-Cut® Technology: Effects of Stiffening Wafer and Defect Interaction |
| Journal |
Advanced Materials Research (Volumes 33 - 37) |
| Volume |
Advances in Fracture and Materials Behavior |
| Edited by |
Wei Yang, Mamtimin Geni, Tiejun Wang and Zhuo Zhuang |
| Pages |
67-72 |
| DOI |
10.4028/www.scientific.net/AMR.33-37.67 |
| Online since |
March, 2008 |
| Authors |
Bin Gu,
Hong Yuan Liu,
Yiu Wing Mai,
Xi Qiao Feng,
Shou Wen Yu
|
| Keywords |
Crack Growth, Fracture Mechanics, Silicon-on-Insulator Wafer, Smart-Cut Technology, Stress Intensity Factor (SIF) |
| Abstract |
In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut
process, a recently established ion cut technology which enables highly efficient fabrication of
various silicon-on-insulator (SOI) wafers of very high uniformity in thickness. Using integral
transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity
factors, energy release rate and crack opening displacements are derived in order to examine several
important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction
and stiffening wafer on defect growth are investigated. The numerical results indicate that a
stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it
slows down the defect growth by decreasing the magnitudes of SIFs. Defect interaction also plays
an important role in the splitting process of SOI wafers, but its contribution depends strongly on the
size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate
the implantation dose required for splitting a SOI wafer. |
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