Paper Title:
Mechanism of Silicon/Carbon Reaction for β-SiC Bonded SiC Materials
| Periodical | Advanced Materials Research (Volumes 335 - 336) |
|---|---|
| Main Theme | Advanced Materials and Structures |
| Edited by | Yun-Hae Kim, Prasad Yarlagadda, Xiaodong Zhang and Zhijiu Ai |
| Pages | 12-17 |
| DOI | 10.4028/www.scientific.net/AMR.335-336.12 |
| Citation | Chun Jiang Lv et al., 2011, Advanced Materials Research, 335-336, 12 |
| Online since | September, 2011 |
| Authors | Chun Jiang Lv, Yang Yang, Zhen Liu, Long Fei Li, Cheng Chang, Jian Feng Gong |
| Keywords | Microstructure, Reaction Sintering, ß-SiC Bonded Sic |
| Price | US$ 28,- |
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Abstract
Based on industrial silicon and carbon black as starting materials,β-SiC bonded SiC materials were prepared. The microstructure of such material and the silicon/carbon reaction were analyzed and investigated by XRD, SEM and other tools. The results indicate that the synthesis of β-SiC at 1400℃ can be achieved through gas-phase mass transfer, liquid dissolution as well as in-situ reaction. While gas-phase mass transfer is the dominant reaction during the sintering of the material, in which β-SiC exists mainly as nanowhisker. The formation of β-SiC nanowires is believed to be the mechanism of reaction sintering.
