Paper Title:
Influence of Ar/O2 Ratio on the Prpoperties of Transparent Conducting ZnO:Zr Films Deposited by DC Reactive Magnetron Sputtering
  Abstract

Transparent conducting ZnO:Zr thin films were deposited on glass substrates by DC reactive magnetron sputtering in Ar+O2 ambience with different Ar/O2 ratios. The structural, electrical and optical properties of ZnO:Zr films were analyzed by X-ray diffraction, four-point probe measurements and UV–vis spectrophotometers. When Ar/O2 ratio increases from 20:1 to 25:1, the resistivity significantly decreases because of the improvement of the crystallinity. However, with further increase in Ar/O2 ratio, the crystallinity begins to deteriorate resulting in an increase in the resistivity. The films deposited at the optimum Ar/O2 ratio of 25:1 have the minimum resistivity of 1.4×10-3 Ω•cm and a high transmittance of above 92%.

  Info
Periodical
Advanced Materials Research (Volumes 335-336)
Chapter
Chapter 7: Optical/Electronic/Magnetic Materials
Edited by
Yun-Hae Kim, Prasad Yarlagadda, Xiaodong Zhang and Zhijiu Ai
Pages
964-967
DOI
10.4028/www.scientific.net/AMR.335-336.964
Citation
H. F. Zhang, X. F. Wang, "Influence of Ar/O2 Ratio on the Prpoperties of Transparent Conducting ZnO:Zr Films Deposited by DC Reactive Magnetron Sputtering", Advanced Materials Research, Vols. 335-336, pp. 964-967, 2011
Online since
September 2011
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$32.00
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