Paper Title:
Structural and Optoelectrical Properties of Aluminum-Doped Zinc Oxide Thin Films for Organic Photovoltaic Cells
  Abstract

Thin films of transparent conducting aluminum-doped zinc oxide (ZnO:Al) were grown by rf magnetron sputtering technique using a sintered ceramic target of ZnAl2O4. The microstructure and optoelectrical properties of the deposited films were characterized wiyh XRD, four-point probe and spectrophotometer. The results show that the polycrystalline ZnO:Al films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the substrate temperature significantly affects the crystal structures and optoelectrical properties of the thin films. The ZnO:Al films deposited at the substrate temperature of 670 K has the relatively well crystallinity, the largest crystal grain, the highest transmittance and the highest figure of merit.

  Info
Periodical
Chapter
Chapter 3: Materials Forming/Machining/Joining
Edited by
Prasad Yarlagadda, Yun-Hae Kim, Zhijiu Ai and Xiaodong Zhang
Pages
532-535
DOI
10.4028/www.scientific.net/AMR.337.532
Citation
J.H. Gu, Z. Y. Zhong, C.Y. Yang, "Structural and Optoelectrical Properties of Aluminum-Doped Zinc Oxide Thin Films for Organic Photovoltaic Cells", Advanced Materials Research, Vol. 337, pp. 532-535, 2011
Online since
September 2011
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Price
$32.00
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