Paper Title:
Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces
  Abstract

The nucleation mechanism during the epitaxial graphene films on Si-terminated SiC (0001) surfaces was investigated by atomic force microscopy (AFM) and Raman scattering spectrum. By imaging the change of Si-terminated SiC substrate surfaces, we observed the process of the initial nucleation and the wrinkle formation of graphene. The nucleation of epitaxial graphene phase initiates at 1450°C and the wrinkle formation depends on the thermal decomposition time.

  Info
Periodical
Chapter
Chapter 3: Mechanical Dynamics and its Applications
Edited by
Xiaodong Zhang, Zhijiu Ai, Prasad Yarlagadda and Yun-Hae Kim
Pages
530-533
DOI
10.4028/www.scientific.net/AMR.338.530
Citation
Q. B. Liu, J. Li, J. J. Wang, S. B. Dun, Z. H. Feng, "Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces", Advanced Materials Research, Vol. 338, pp. 530-533, 2011
Online since
September 2011
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$32.00
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