Paper Title:
The Leakage Mechanism Study of Hump Reverse Current Observed in n+/p Salicided Junction
  Abstract

We have observed a hump structure in reverse current-voltage curve of n+/p shallow diode for both area and perimeter structures fabricated with the CMOS technology using cobalt (Co) salicide. Through analyzing the ratio of abnormal to inherent leakage current dependency on the applied voltage and temperature, we confirm that the leakage path is originated from the touch of CoSi points to barrier edge of the n+/p diode. Moreover, for perimeter structures, this leakage path exists both in the areal and peripheral region with a movable border between them.

  Info
Periodical
Chapter
Chapter 3: Mechanical Dynamics and its Applications
Edited by
Xiaodong Zhang, Zhijiu Ai, Prasad Yarlagadda and Yun-Hae Kim
Pages
553-556
DOI
10.4028/www.scientific.net/AMR.338.553
Citation
J. Chen, Y. S. Liu, Y. Y. Zhu, "The Leakage Mechanism Study of Hump Reverse Current Observed in n+/p Salicided Junction", Advanced Materials Research, Vol. 338, pp. 553-556, 2011
Online since
September 2011
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Price
$32.00
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