Paper Title:
Optimization of Poly-Silicon Deposition Process for Semiconductor Bridge
  Abstract

Aiming at the severe effect of poly-silicon deposition process on the performance of semiconductor bridge, experiments were made on optimization of poly-silicon deposition to obtain optimal process conditions. Resistance of the poly-silicon semiconductor bridge was stabilized 1±0.07Ω, satisfying its application requirements.

  Info
Periodical
Chapter
Chapter 1: Measure Control Technologies and Intelligent Systems
Edited by
Zhijiu Ai, Xiaodong Zhang, Yun-Hae Kim and Prasad Yarlagadda
Pages
92-95
DOI
10.4028/www.scientific.net/AMR.339.92
Citation
Z. Y. Zhang, Y. Mei, Z. C. Feng, X. G. Li, J. G. Li, G. X. Hu, "Optimization of Poly-Silicon Deposition Process for Semiconductor Bridge", Advanced Materials Research, Vol. 339, pp. 92-95, 2011
Online since
September 2011
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$32.00
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