Paper Title:
Improved Electroluminescence from nc-Si Film Embedded in p-i-n Structure LED
  Abstract

Intensive electroluminescence (EL) visible to the naked eyes is observed from p–i–n structure light emitting diodes with nanocrystalline Si (nc-Si) film as the luminescent layer. It is found the luminescence intensity increases by 20 times compared with that of nc-Si film without p-i-n structure and the turn-on voltage is sharply reduced. Combined with I-V and TEM analysis, the improved EL is attributed to the enhancement of carrier injection probability of nc-Si inserted in p-i-n structure.

  Info
Periodical
Chapter
Session 1: Mechanical Engineering and Materials Science
Edited by
Honghua Tan
Pages
177-180
DOI
10.4028/www.scientific.net/AMR.340.177
Citation
Z.Y. Ma, G.Y. Xia, X.F. Jiang, W. Li, L. Xu, K.J. Chen, D. Feng, "Improved Electroluminescence from nc-Si Film Embedded in p-i-n Structure LED", Advanced Materials Research, Vol. 340, pp. 177-180, 2012
Online since
September 2011
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