Paper Title:
Smooth GaAs (110) Surface Fabrication Using the Ga-Assisted Deoxidation Method
  Abstract

We have practiced the Ga-assisted deoxidation method on GaAs(110) surface. When the deposit amount of Ga is suitable, flat GaAs(110) surface without any thermal deoxidation induced pits and excrescent GaAs islands obtained with the Ga-assisted deoxidation method. The obtained results suggested that, 9ML Ga was optimized dose for GaAs(110) surface, which is a little more than GaAs(001) surface indicating a thicker oxide layer of GaAs(110) surface.

  Info
Periodical
Advanced Materials Research (Volumes 341-342)
Edited by
Liu Guiping
Pages
138-141
DOI
10.4028/www.scientific.net/AMR.341-342.138
Citation
J. Q. Liu, Y. H. Chen, B. Xu, Z. G. Wang, "Smooth GaAs (110) Surface Fabrication Using the Ga-Assisted Deoxidation Method", Advanced Materials Research, Vols. 341-342, pp. 138-141, 2012
Online since
September 2011
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