Paper Title:
Growth of InAs Quantum Wires with Ga-Assisted Deoxidation on Cleaved-Edge GaAs (110) Surface
  Abstract

We have fabricated site-controlled InAs quantum wires (QWRs) on the cleaved surface (110) of AlGaAs/GaAs superlattices (SLs) structures by using Ga-assisted deoxidation method. In the surface of SLs regions, InAs QWRs were nucleated on GaAs in stead of AlGaAs. In the (110) surface without superlattices(SLs) structures, QDs with a large size were obtained, which is considered hard to realize. To understand the different InAs growth phenomena in the regions with and without superlattices structures, we suggest that indium adatoms have an apparent trend to migrate to the SLs area.

  Info
Periodical
Advanced Materials Research (Volumes 341-342)
Edited by
Liu Guiping
Pages
73-76
DOI
10.4028/www.scientific.net/AMR.341-342.73
Citation
J. Q. Liu, Y. H. Chen, B. Xu, Z. G. Wang, "Growth of InAs Quantum Wires with Ga-Assisted Deoxidation on Cleaved-Edge GaAs (110) Surface", Advanced Materials Research, Vols. 341-342, pp. 73-76, 2012
Online since
September 2011
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