Paper Title:
A Study on Structure and Electronic Properties of Single-Wall GaN Nanotubes
  Abstract

Using the first principle method based on density functional theory (DFT), we have studied the stability, structure, and electronic properties in (2 2), (3, 3), (4 4), (5 5), (6 6) armchair and (4 0), (5 0), (6 0) zigzag GaN nanotubes (GaN-NTs). In addition, the radius of N, Ga atoms, buckling separations, band gap and binding energy of (3 3) and (4 0) GaN-NTs in c-axis strain are investigated. We also explore the modification of density of states due to the strain along c-axis orientation. It is found that the strain can change conductive properties of (3 3) and (4 0) GaN-NTs.

  Info
Periodical
Advanced Materials Research (Volumes 347-353)
Chapter
Chapter 8: Energy Materials
Edited by
Weiguo Pan, Jianxing Ren and Yongguang Li
Pages
3489-3492
DOI
10.4028/www.scientific.net/AMR.347-353.3489
Citation
L. B. Shi, H. K. Yuan, "A Study on Structure and Electronic Properties of Single-Wall GaN Nanotubes", Advanced Materials Research, Vols. 347-353, pp. 3489-3492, 2012
Online since
October 2011
Export
Price
$35.00
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