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A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

Journal Advanced Materials Research (Volumes 347 - 353)
Volume Renewable and Sustainable Energy
Edited by Weiguo Pan, Jianxing Ren and Yongguang Li
Pages 3666-3669
DOI 10.4028/www.scientific.net/AMR.347-353.3666
Citation Ming Biao Li et al., 2011, Advanced Materials Research, 347-353, 3666
Online since October, 2011
Authors Ming Biao Li, Li Bin Shi
Keywords Semiconductor, Solar Cell, Thin Film
Abstract

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

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