Paper Title:
Studies on the Preparation and Properties of Sheet Ni-Doped ZnO
  Abstract

ZnO is a direct wide band-gap Ⅱ-Ⅵ semiconductor material. For decades, ZnO has gained more and more attention as a wide band semiconductor. This paper introduced a modified homogeneous precipitation method to prepare sheet Ni-doped ZnO crystal. The preparation process was studied and the mechanism of this method was discussed. The properties of the sheet Ni-doped ZnO crystal and the effects of growth parameters on the quality of sheet Ni-doped ZnO crystal were studied using XTJ30-micro image manipulation system, thermal analysis system, X-ray diffraction. etc.

  Info
Periodical
Advanced Materials Research (Volumes 356-360)
Chapter
Chapter 2: Environmental Materials
Edited by
Hexing Li, Qunjie Xu and Daquan Zhang
Pages
435-438
DOI
10.4028/www.scientific.net/AMR.356-360.435
Citation
L. Cao, D. Z. An, Y. X. Wang, S. S. He, C. J. Dong, "Studies on the Preparation and Properties of Sheet Ni-Doped ZnO", Advanced Materials Research, Vols. 356-360, pp. 435-438, 2012
Online since
October 2011
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Price
$32.00
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