Paper Title:
Improved Extraction of the Local Carrier Generation Lifetime from Forward Diode Characteristics
  Abstract

This paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The forward I-V and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured. The recombination current density can be extracted from the area forward current density by subtracting with the area diffusion current density. Form the recombination current density, the local generation and recombination lifetime can be obtained.

  Info
Periodical
Advanced Materials Research (Volumes 378-379)
Chapter
Chapter 6: New Materials and Composites Materials
Edited by
Brendan Gan, Yu Gan and Y. Yu
Pages
593-596
DOI
10.4028/www.scientific.net/AMR.378-379.593
Citation
W. Pengchan, T. Phetchakul, A. Poyai, "Improved Extraction of the Local Carrier Generation Lifetime from Forward Diode Characteristics", Advanced Materials Research, Vols. 378-379, pp. 593-596, 2012
Online since
October 2011
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Price
$32.00
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