Paper Title:
Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis
  Abstract

Density of states in the channel bulk area of a-Si:H thin-film transistors (TFTs) was extracted by using low-frequency noise analysis. The drain current noise power spectral density shows 1/ƒγ behavior at relatively high frequencies (ƒ > 1 kHz), which is due to the exponential distribution of tail states. For the analysis, the modified number fluctuation model which is correlated with mobility fluctuation was used. From the relationship (γ=1- kT/Et ) between exponent γ and the slope of exponential distribution Et of band tail states, the distribution of the band tail near conduction band was extracted.

  Info
Periodical
Advanced Materials Research (Volumes 378-379)
Chapter
Chapter 6: New Materials and Composites Materials
Edited by
Brendan Gan, Yu Gan and Y. Yu
Pages
642-645
DOI
10.4028/www.scientific.net/AMR.378-379.642
Citation
K. Lee, Y. Son, J. Lee, J. H. Lee, S. Jang, J. J. Park, S. Kim, H. C. Shin, "Density of States Extraction in Bulk Channel Area of a-Si:H Thin-Film Transistors by Using Low-Frequency Noise Analysis", Advanced Materials Research, Vols. 378-379, pp. 642-645, 2012
Online since
October 2011
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Price
$32.00
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