Paper Title:
The Study of p-n and Schottky Junction for Magnetodiode
  Abstract

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

  Info
Periodical
Advanced Materials Research (Volumes 378-379)
Chapter
Chapter 6: New Materials and Composites Materials
Edited by
Brendan Gan, Yu Gan and Y. Yu
Pages
663-667
DOI
10.4028/www.scientific.net/AMR.378-379.663
Citation
T. Phetchakul, W. Luanatikomkul, C. Leepattarapongpan, E. Chaowicharat, P. Pengpad, A. Poyai, "The Study of p-n and Schottky Junction for Magnetodiode", Advanced Materials Research, Vols. 378-379, pp. 663-667, 2012
Online since
October 2011
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Price
$32.00
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