Paper Title:
Growth of Vertically Aligned ZnO Nanowires on Iron Oxide Layer
  Abstract

A low cost and substrate-independent method has been established to synthesize vertically aligned ZnO nanowires (NWs) on iron oxide films coated silicon substrates via low pressure Chemical Vapor Deposition (CVD) method at 650oC. In this study, Si substrates were dipped into the iron (III) nitrate nonahydrate solution prior to the synthesis process. This oxidized iron film facilitated the growth of highly oriented (002) ZnO seed layer, which allowed subsequent vertically aligned ZnO NWs to be grown on top of it during the synthesis. This approach has provided a good alternative to grow vertically aligned ZnO NWs without the need of considering the epilayer relationship between the ZnO and the material to be used as substrate.

  Info
Periodical
Advanced Materials Research (Volumes 378-379)
Chapter
Chapter 6: New Materials and Composites Materials
Edited by
Brendan Gan, Yu Gan and Y. Yu
Pages
740-743
DOI
10.4028/www.scientific.net/AMR.378-379.740
Citation
S. Y. Pung, K. L. Choy, "Growth of Vertically Aligned ZnO Nanowires on Iron Oxide Layer", Advanced Materials Research, Vols. 378-379, pp. 740-743, 2012
Online since
October 2011
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Price
$32.00
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