Paper Title:
High Efficiency 500W RF Generator
  Abstract

In the previous literature about RF generator, Efficiency of output of RF generator can reach 60-70 percent. In this paper, a new 500W RF generator with high efficiency and high stability is designed and fabricated for plasma applications. The efficiency of a power amplifier in the RF generator is improved by using Class-E amplifier. The Class-E power amplifiers described here is based on a load network synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the AC cycle. For that circuit, the author measures 73 percent efficiency of output of RF generator at 13.56MHZ and 478W output from DE375 MOSFET. The main reasons of power dissipation mainly are analyzed, and some measures are taken to improve them by the optimization principles and experimental results and the efficiency of the power output can reach above 70 percent.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 5: Computer-Aided Design in Materials Engineering
Edited by
Wu Fan
Pages
1333-1336
DOI
10.4028/www.scientific.net/AMR.383-390.1333
Citation
W. Qin, Y. T. Li, Y. J. Li, X. P. Xu, "High Efficiency 500W RF Generator", Advanced Materials Research, Vols. 383-390, pp. 1333-1336, 2012
Online since
November 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Masato Kaneta, Akihiro Kanbe, Hitoshi Hirata, Tatsuhiro Shimura, Kentarou Yamagishi, Haruo Kobayashi
Abstract:This paper proposes new architectures for envelope-tracking power supplies for base stations. (1) The proposed multiphase DC-DC converter...
241
Authors: Jia Ni Ye, Zachary Nosker, Kazuyuki Wakabayashi, Takuya Yagi, Osamu Yamamoto, Nobukazu Takai, Kiichi Niitsu, Keisuke Kato, Takao Ootsuki, Isao Akiyama, Haruo Kobayashi
Chapter 6: Information and Communication Engineering
Abstract:This paper describes the analysis and design of digitally-controlled class-E power amplifiers, which are suitable for fine CMOS...
273
Authors: Wen Yuan Li, Sheng Zheng
Chapter 4: Pharmaceutical, Chemical and Energy Engineering
Abstract:A SiGe HBT power amplifier for Time Division Synchronous Code-Division Multiple-Access (TD-SCDMA) application with a single positive 3.3V...
765
Authors: Zhi Qun Cheng, Li Wei Jin, Wen Shi
Chapter 1: Microelectronics, Electrocircuit and Materials
Abstract:A broadband power amplifier module based on GaN HEMT operating Ku band is designed. TGF2023-02 Chip of GaN HEMT from TriQuint is modeled...
39
Authors: Jun Chen, Hua Wei Yang, Kai Xiong Su
Chapter 5: Electronics and Microelectronics
Abstract:In order to improve the efficiency of Digital TV transmitter, we uses a new type of four-stage Doherty structure. Based on the transmission...
1095