Paper Title:
A Simplified Model of Write Amplification for Solid State Drives Adopting Page-Level Address Translation Mechanism
  Abstract

Due to its advantages, such as shock resistance, low power consumption, and so on, solid state drives are considered as a next generation storage device. And write amplification is a very import system parameter for evaluating performance. To simplify the analytical model of write amplification for solid state drives adopting page-level address translation mechanism, this paper proposes a probability model. Furthermore, numerical results based on our proposed probability model are also obtained. This paper can pose as a guideline for a first-order estimation of the write amplification for parameter ranges in solid state drives taking page mapping scheme.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 8: Modeling, Analysis, and Simulation of Manufacturing Processes
Edited by
Wu Fan
Pages
2156-2160
DOI
10.4028/www.scientific.net/AMR.383-390.2156
Citation
W. N. Wang, Z. C. Wang, K. Ni, Y. Zhao, J. S. Ma, L. F. Pan, "A Simplified Model of Write Amplification for Solid State Drives Adopting Page-Level Address Translation Mechanism", Advanced Materials Research, Vols. 383-390, pp. 2156-2160, 2012
Online since
November 2011
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Price
$32.00
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