Paper Title:
Numerical Aperture and Partial Coherence Optimization in Optical Li-Thography under Off-Axis Illumination
  Abstract

Numerical aperture NA and partial coherence sigma optimization in optical lithography is investigated for 100 nm dense lines under annular illumination and quadrupole illumination. Depth of focus (DOF) is calculated at different NA and sigma settings using PROLITH software. Based on the calculations of DOF, the NA and sigma settings are optimized by finding the values to maximize the DOF. At the optimum NA and sigma settings for 100 nm dense lines, the imaging performance is analyzed for semi-dense and isolated lines.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 8: Modeling, Analysis, and Simulation of Manufacturing Processes
Edited by
Wu Fan
Pages
2437-2442
DOI
10.4028/www.scientific.net/AMR.383-390.2437
Citation
L. P. Guo, S. G. Fu, X. J. Liu, "Numerical Aperture and Partial Coherence Optimization in Optical Li-Thography under Off-Axis Illumination", Advanced Materials Research, Vols. 383-390, pp. 2437-2442, 2012
Online since
November 2011
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Price
$32.00
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