Paper Title:
Characteristics of the SiN Uniaxial Strained NMOSFET with Channel Fluorine Implantation
  Abstract

Channel fluorine implantation (CFI) has been successfully integrated with silicon nitride contact etch stop layer (SiN CESL) to further improve the channel hot electron stress (CHES) and constant voltage stress (CVS) reliability of n-channel metal-oxide-semiconductor field-effect-transistor with HfO2/SiON gate stack. Although the improvement of transconductance, drain current and subthreshold swing due to the fluorine passivation is screened out by the effect of uniaxial tensile strain, the result clearly demonstrates that integrating the CFI process in the SiN CESL-strained device can further suppress the CHES- and CVS-induced threshold voltage shift.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 11: Materials Behavior
Edited by
Wu Fan
Pages
3178-3182
DOI
10.4028/www.scientific.net/AMR.383-390.3178
Citation
Y. Y. Chen, C. R. Hsieh, F. Y. Chiu, "Characteristics of the SiN Uniaxial Strained NMOSFET with Channel Fluorine Implantation", Advanced Materials Research, Vols. 383-390, pp. 3178-3182, 2012
Online since
November 2011
Keywords
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Price
$32.00
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