Paper Title:
Design and Simulation of Infrared Absorption Based on Hydrogenated Amorphous Silicon Thin Film
  Abstract

Hydrogenated amorphous silicon (a-Si:H) thin film has nowadays attracted much attention in a wide range of electronic applications as in image sensors and in solar cells because of its merits and compatibility with semiconductor technology. In this paper, the background of a-Si:H thin film technology and microbolometer technology has been described in details. According to optical admittance matrix method, the multilayer film system based on a-Si:H thin film was simulated by MatLab software, mainly for the simulation of infrared absorption layers and the simulation of microbolometer. The results show that the combination of TiN film and a-Si:H film is suitable for the design of microbolometer within the middle and far infrared wave band (8-14µm), and the infrared absorptivity of the modified microbolometer can reach over 90%.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 18: Joining Processes
Edited by
Wu Fan
Pages
4702-4707
DOI
10.4028/www.scientific.net/AMR.383-390.4702
Citation
J. W. Fu, W. Li, M. Y. Wu, M. He, Y. D. Jiang, "Design and Simulation of Infrared Absorption Based on Hydrogenated Amorphous Silicon Thin Film", Advanced Materials Research, Vols. 383-390, pp. 4702-4707, 2012
Online since
November 2011
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Price
$32.00
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