Paper Title:
Estimating the Threading Dislocation Density of Thick GaN Films
  Abstract

The threading dislocation density (TDD) of thick GaN films grown by hydride vapor phase epitaxy (HVPE) was estimated through counting etch pit density (EPD) and calculating full width at half maximum(FWHM)of double crystal X-Ray diffraction (DCXRD). TDD was about 108 through counting EPD, while it was about 109 through calculating the FWHMs of (0002) and (10î2). The experiment results show that the two methods are both suited to estimating the TDD of the thick HVPE-GaN films with 350um thickness. But they have some difference: EPD method is fitter in evaluating the dislocation density of the surface of thick GaN film, but FWHM method can gain the total dislocation density of thick GaN film. The method calculating the FWHMs possesses more general statistical significance.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 20: Metrology and Measurement
Edited by
Wu Fan
Pages
5264-5267
DOI
10.4028/www.scientific.net/AMR.383-390.5264
Citation
R. Wang, J. L. Zhang, R. X. Yang, X. J. Zhang, "Estimating the Threading Dislocation Density of Thick GaN Films", Advanced Materials Research, Vols. 383-390, pp. 5264-5267, 2012
Online since
November 2011
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Price
$32.00
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