Paper Title:
Simulated Programming Characteristics of Stacked-Gate Flash Memories with High-k Tunnel Dielectrics
  Abstract

Due to the reduced gate coupling ratio, the channel Fowler-Nordheim (CFN) programming speed of stacked-gate flash memories with high-permittivity (k) tunnel dielectrics (TDs) is helpless in operation voltage reduction. Although the electric field on high-k tunnel dielectrics is lower than SiO2 tunnel oxide, enhanced impact ionization rate and lower barrier height contribute to higher channel hot-electron (CHE) injection current and efficiency. Consequently, high-k TDs are only effective for the memories programmed with hot electron injection rather than FN tunneling, which is suitable for the NOR-type stacked-gate flash memories.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 22: Computer-Aided Engineering in Manufacturing
Edited by
Wu Fan
Pages
5851-5854
DOI
10.4028/www.scientific.net/AMR.383-390.5851
Citation
Y. Y. Chen, "Simulated Programming Characteristics of Stacked-Gate Flash Memories with High-k Tunnel Dielectrics", Advanced Materials Research, Vols. 383-390, pp. 5851-5854, 2012
Online since
November 2011
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Qing Wen Song, Yu Ming Zhang, Xiao Yan Tang, Yu Hu Wang, Hao Yuan, Yi Men Zhang
Chapter IV: SiC Devices and Circuits
Abstract:In this paper, an improved planar MOS barrier Schottky (PMBS) rectifier is proposed which utilizes the PECVD deposited high-k...
906