Paper Title:
Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications
  Abstract

Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-to-operate technology was developed to fabricate germanium-silicon quantum dots in a SiOx matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabrication of high density germanium-silicon quantum dots. Quantum dots with diameters of 3~4 nm embedded in the amorphous SiOx layer were clearly observed. The morphological features of the thin film were characterized. The optical properties were performed by Raman spectroscopy, photoluminescence spectrum and XRD test respectively to verify the crystallization of quantum dots in the SiOx matrix. Reflectance spectrum displayed a high light absorption rate in a spectra region from 300 nm to 1200 nm, evidencing that germanium-silicon quantum dots have promising features to be used as absorber for photovoltaic application.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 24: Laser Based Manufacturing
Edited by
Wu Fan
Pages
6270-6276
DOI
10.4028/www.scientific.net/AMR.383-390.6270
Citation
L. H. Han, J. Wang, R. R. Liang, "Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications", Advanced Materials Research, Vols. 383-390, pp. 6270-6276, 2012
Online since
November 2011
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$32.00
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