Paper Title:
Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition
  Abstract

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 24: Laser Based Manufacturing
Edited by
Wu Fan
Pages
6289-6292
DOI
10.4028/www.scientific.net/AMR.383-390.6289
Citation
J. T. He, B. X. Tan, Q. Q. Wei, Y. B. Su, S. L. Yang, "Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition", Advanced Materials Research, Vols. 383-390, pp. 6289-6292, 2012
Online since
November 2011
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Price
$32.00
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