Paper Title:
XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition
  Abstract

Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 24: Laser Based Manufacturing
Edited by
Wu Fan
Pages
6293-6296
DOI
10.4028/www.scientific.net/AMR.383-390.6293
Citation
J. T. He, B. X. Tan, Y. B. Su, S. L. Yang, Q. Q. Wei, "XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition", Advanced Materials Research, Vols. 383-390, pp. 6293-6296, 2012
Online since
November 2011
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Price
$32.00
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