Paper Title:
Computer Modeling of MWIR Homojunction Photodetector Based on Indium Antimonide
  Abstract

High operating temperatures infrared photodetectors are needed for improving the performance of existing military and civilian infrared systems. To obtain high device performance at higher temperatures, the thermally generated noise required to be reduced. Minority-carrier extraction and exclusion techniques are the approaches for decreasing the thermal noise of infrared systems. In the present work, an InSb extraction diode was studied and simulated for operation in the MWIR region. The simulation was performed using ATLAS device simulator from SILVACO®. The energy band diagram, doping profile, electric field profile, dark current and spectral response were calculated as a function of device thickness, applied reverse voltage and operating wavelength. The simulated photodetector exhibited a zero bias resistance-area product, R0A = 1.6×〖10〗^(-3) Ω〖.cm〗^2 at 240K.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 26: Modeling, Analysis, and Simulation of Manufacturing Processes III
Edited by
Wu Fan
Pages
6806-6810
DOI
10.4028/www.scientific.net/AMR.383-390.6806
Citation
M. Nadimi, A. Sadr, "Computer Modeling of MWIR Homojunction Photodetector Based on Indium Antimonide", Advanced Materials Research, Vols. 383-390, pp. 6806-6810, 2012
Online since
November 2011
Authors
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$32.00
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