Paper Title:
High K / Metal Gate of Short-Channel SOI NMOSFET Research
  Abstract

Short-channel under TaCN/La2O3 gate structure SOI NMOSFET has been studied in this paper, contrast with the traditional gate structure gate leakage current and others electrical properties, using TaCN/La2O3 gate structure,significantly improved short-channel device performance etc. Additionally, the gate structure in the L=40nm, 30nm and 20nm of C-V characteristic and output characteristic are also studied; all the simulation results coincide with the theoretical analysis.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 27: Semiconductor Materials Manufacturing
Edited by
Wu Fan
Pages
6902-6907
DOI
10.4028/www.scientific.net/AMR.383-390.6902
Citation
G. Lu, B. Zhao, "High K / Metal Gate of Short-Channel SOI NMOSFET Research", Advanced Materials Research, Vols. 383-390, pp. 6902-6907, 2012
Online since
November 2011
Authors
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Price
$32.00
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