Paper Title:
Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes
  Abstract

Electrical conductivity of silicon nanomembranes (SiNMs) was measured by van der Pauw method under two surface modifications: hydrofluoric acid (HF) treatment and vacuum-hydrogenated(VH) treatment, which create hydrogen-terminated surface; and one interface modification: forming gas (5% H2 in N2) anneal, which causes hydrogen passivated interfaces. The results show that thinner SiNMs are more sensitive to the surface modifications, and HF treatment can cause larger drop of sheet resistance than that caused by VH treatment probably because of Fluorine (F). Forming gas anneal can also improve the conductivity depending on the interface trap density.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 29: Nanofabrication, Nanometrology and Applications
Edited by
Wu Fan
Pages
7220-7223
DOI
10.4028/www.scientific.net/AMR.383-390.7220
Citation
X. F. Zhao, P. Han, S. Scott, M. G. Lagally, "Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes", Advanced Materials Research, Vols. 383-390, pp. 7220-7223, 2012
Online since
November 2011
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Price
$32.00
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