Paper Title:
Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy
  Abstract

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 30: Automation, Mechatronics and Robotics
Edited by
Wu Fan
Pages
7619-7623
DOI
10.4028/www.scientific.net/AMR.383-390.7619
Citation
Z. Z. Lu, F. Yu, L. Yu, L. H. Cheng, P. Han, "Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy", Advanced Materials Research, Vols. 383-390, pp. 7619-7623, 2012
Online since
November 2011
Keywords
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Price
$32.00
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