Paper Title:
Electrical Properties of Multilayer Synthesized CuInSi Thin Film
  Abstract

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

  Info
Periodical
Advanced Materials Research (Volumes 383-390)
Chapter
Chapter 3: Surface, Subsurface, and Interface Phenomena
Edited by
Wu Fan
Pages
822-825
DOI
10.4028/www.scientific.net/AMR.383-390.822
Citation
P. Luan, J. S. Xie, J. H. Li, "Electrical Properties of Multilayer Synthesized CuInSi Thin Film", Advanced Materials Research, Vols. 383-390, pp. 822-825, 2012
Online since
November 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li
Chapter 9: Composite Materials II
Abstract:Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of...
2770
Authors: Jian Sheng Xie, Jin Hua Li, Ping Luan
Chapter 2: Surface, Subsurface and Interface Phenomena
Abstract:Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different...
302
Authors: Athorn Vora-Ud, Somporn Thoawankaew, Mati Horprathum, Pennapa Muthitamongkol, Pitak Eiamchai, Chanchana Thanachayanont, Weerasak Somkhunthot, Tosawat Seetawan
Chapter 3: Coating and Thin Film
Abstract:Germanium–Antimony–Telluride (Ge–Sb–Te) has low electrical resistivity and thermal conductivity for good thermoelectric properties. The...
257