Development of Theory Model in Chemical Mechanical Polishing
| Periodical | Advanced Materials Research (Volumes 403 - 408) |
|---|---|
| Main Theme | MEMS, NANO and Smart Systems |
| Edited by | Li Yuan |
| Pages | 767-771 |
| DOI | 10.4028/www.scientific.net/AMR.403-408.767 |
| Citation | Xiang Dong Yang et al., 2011, Advanced Materials Research, 403-408, 767 |
| Online since | November, 2011 |
| Authors | Xiang Dong Yang, Xin Wei, Xiao Zhu Xie, Zhuo Chen |
| Keywords | Chemical Mechanical Polishing (CMP), Friction, Material Removal Mechanism, Theory Modeling, Wear |
| Price | US$ 28,- |
Chemical mechanical polishing (hereinafter referred to as CMP) which is to provide the best global planarization technology has been researched and applied in the field of ultra-precision surface finish. This article outlines the principles of the CMP process, focusing on the development of the major theoretical models such as phenomenological model, contact mechanics model, fluid dynamics model and hybrid model based contact mechanics and fluid dynamics in chemical mechanical polishing process. The hybrid model based contact mechanics and fluid dynamics has been a good developed in recent years. The model based on the molecular / atomic scale is proposed the further research methods of CMP's theoretical model.