Effects of the Substrates Temperatue and Argon Oxygen Ratio on ZnO Thin Films
| Periodical | Advanced Materials Research (Volumes 415 - 417) |
|---|---|
| Main Theme | Advanced Materials |
| Edited by | Jinglong Bu, Zhengyi Jiang and Sihai Jiao |
| Pages | 1953-1958 |
| DOI | 10.4028/www.scientific.net/AMR.415-417.1953 |
| Citation | Hua Zhu et al., 2011, Advanced Materials Research, 415-417, 1953 |
| Online since | December, 2011 |
| Authors | Hua Zhu, Hui Wen Liu, Hao Gao, Xiao Wei Feng |
| Keywords | Magnetron Sputtering, Transmittance, X-Ray Diffraction (XRD), ZnO Thin Films |
| Price | US$ 28,- |
Abstract. Using the radio frequency reactive magnetron sputtering technique, ZnO and Al-dopped ZnO thin films were fabricated on glass substrate by changing the Ar/O2 ratio and substrate temperature. The film crystallinity、optical properties and surface morphology were investigated by X-ray diffraction、 UV - visible spectrophotometer and scanning electron microscopy (SEM). The XRD results showed that by changing the argon oxygen ratio, Al-dopped ZnO films deposited at sputtering power of 40W and room temperature for 1 hour sputtering time showed no significant peaks, suggesting that the film growth was amorphous. UV-Vis spectrophotometer at 400nm wavelength test showed less than 90% light transmission rate. When substrate temperature was increased to 200 ° C, significant (002) diffraction peak and transmittance of 88% or more in the 400 ~ 800nm wavelength range appeared. A minimum XRD diffraction peak FWHM was found at substrate temperature of 300 ° C. TEM showed well crystal growth with maximum grain size at 300 ° C, XRD showed that there are only (101) peaks ,no (002) peaks in Al- doped ZnO.
