Paper Title:
InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction
  Abstract

In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  Info
Periodical
Advanced Materials Research (Volumes 47-50)
Edited by
Alan K.T. Lau, J. Lu, Vijay K. Varadan, F.K. Chang, J.P. Tu and P.M. Lam
Pages
383-386
DOI
10.4028/www.scientific.net/AMR.47-50.383
Citation
J. H. Tsai, S. Y. Chiu, W. S. Lour, C. M. Li, Y. Z. Wu, N. X. Su, Y. S. Huang, "InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction", Advanced Materials Research, Vols. 47-50, pp. 383-386, 2008
Online since
June 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Arash Salemi, Hossein Elahipanah, Carl Mikael Zetterling, Mikael Östling
4.4 HV Devices
Abstract:The influence of varying the emitter-base geometry, i.e., the emitter width (WE), emitter contact–emitter edge distance...
958
Authors: Hossein Elahipanah, Arash Salemi, Carl Mikael Zetterling, Mikael Östling
4.4 HV Devices
Abstract:High voltage 4H-SiC bipolar junction transistors (BJTs) with modified etched junction termination extension (JTE) were fabricated and...
978