Paper Title:
Wetting and Adhesion Behavior of Undulated a-C:H Film Deposited on Nano-Scale Copper Dot
  Abstract

This paper investigated the wetting and adhesion property of undulated a-C:H surfaces with surface morphology controlled for a reduced real area of contact. The nano-undulated a-C:H films were prepared by radio frequency plasma enhanced chemical vapor deposition (r.f. PECVD) using nanoscale Cu dots surface on a Si (100) substrate. FE-SEM, AFM analysis showed that the after repeat deposition and plasma induced damage with Ar ions, the surface was nanoscale undulated. This phenomenon changed the surface morphology of a-C:H surface. Raman spectra of film with changed morphology revealed that the plasma induced damage with Ar ions significantly suppressed the graphitization of a-C:H structure. Also, it was observed that while the untreated flat a-C:H surfaces had wetting angle starting ranged from 72° and adhesion force of 332.79 nN. Had wetting angle the undulated a-C:H surfaces, which resemble the surface morphology of a cylindrical shape, increased up to 103.6° and adhesion force decreased down to 11 nN. The measurements agree with Hertz and JKR models. The surface undulation was affected mainly by several factors: the surface morphology affinity to cylindrical shape, reduction of the real area of contact and air pockets trapped in cylindrical double asperities of the surface.

  Info
Periodical
Advanced Materials Research (Volumes 47-50)
Edited by
Alan K.T. Lau, J. Lu, Vijay K. Varadan, F.K. Chang, J.P. Tu and P.M. Lam
Pages
948-951
DOI
10.4028/www.scientific.net/AMR.47-50.948
Citation
Y. J. Jang, J. W. Yi, J. J. Rha, S. S. Kim, "Wetting and Adhesion Behavior of Undulated a-C:H Film Deposited on Nano-Scale Copper Dot ", Advanced Materials Research, Vols. 47-50, pp. 948-951, 2008
Online since
June 2008
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$32.00
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