Paper Title:
A Model for the Films Formation of Nb–Si–N Ternary Compound Deposited
| Periodical | Advanced Materials Research (Volumes 476 - 478) |
|---|---|
| Main Theme | New Materials and Processes |
| Edited by | Wenzhe Chen, Qiang Li, Yonglu Chen, Pinqiang Dai and Zhengyi Jiang |
| Pages | 475-479 |
| DOI | 10.4028/www.scientific.net/AMR.476-478.475 |
| Citation | Yong Jun Jiang, 2012, Advanced Materials Research, 476-478, 475 |
| Online since | February, 2012 |
| Authors | Yong Jun Jiang |
| Keywords | Atoms, Model, Nanohardness, Nb–Si–N |
| Price | US$ 28,- |
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Abstract
By means of the reactive magnetron sputtering method, a series of Nb–Si–N composite films with different Si contents were deposited in an Ar, N2 and SiH4 mixture atmosphere. These films’ chemical composition, phase formation, microstructure and mechanical properties were characterized by the energy dispersive spectroscopy, X-ray diffraction, transmission electron microcopy, atomic force microscopy and nanoindentation. In the Nb–Si–N films, 3 distinct concentration regions have been observed depending on the Si content. Based on the three concentration regions, a three-step model is proposed for the film formation of the Nb–Si–N thin films. This model correlates nanoscale structures with macroscopic properties of the films.
