Paper Title:
Surface Morphology and Interface Reaction of Cu/SiO2/Si (111) Systems Prepared by Radio Frequency Magnetron Sputtering
| Periodical | Advanced Materials Research (Volume 487) |
|---|---|
| Main Theme | Emerging Materials and Mechanics Applications |
| Edited by | Elwin Mao and Wenya Tian |
| Pages | 697-700 |
| DOI | 10.4028/www.scientific.net/AMR.487.697 |
| Citation | Bo Cao et al., 2012, Advanced Materials Research, 487, 697 |
| Online since | March, 2012 |
| Authors | Bo Cao, Tong Rui Yang, Gong Ping Li |
| Keywords | Cu Films, Interface Reaction, Radio Frequency Magnetron Sputtering, Scanning Electron Microscopy (SEM), Surface Morphology, X-Ray Diffraction (XRD) |
| Price | US$ 28,- |
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Abstract
The Cu thin films were prepared at room temperature by radio frequency magnetron sputtering on p-type Si (111) substrates. The surface morphology and interface reaction of Cu thin films were studied at different deposition condition by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the existence of the native silicon oxide layer suppresses the interdiffusion and interface reaction of Cu and Si. The formation of the copper-silicide phase is observed by XRD when the annealing temperature arrives at 450 oC.
